Semiconductor components-Products



Features:Low forward voltage drop.、Excellent high temperature stability.、Fast switching capability.、Lead free in compliance with EU RoHS.

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Main product features: ESD protection of high-speed data line IEC 61000-4-2 electrostatic discharge contact discharge, typical 8Kv, maximum 15kvesd air discharge, typical 15kV, maximum 25kV surface mount, extremely low capacitance, extremely low leakage current, fast response time, bidirectional ESD protection..

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Main product features: forward voltage reduction, excellent high temperature stability, fast switching capability, suffix "g" for halogen-free components, such as csp545sg-a. Lead free parts conform to environmental standard mil-std-19500 / 228.

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Main product features: low profile surface mounting applications to optimize board space. Low power consumption, high efficiency. High current capability, low forward voltage drop. Ultra high speed switch. Silicon epitaxial plane chip, metal silicon junction. Lead free parts conform to environmental standard mil-std-19500 / 228

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Main product features: fast switching speed. Axial lead through hole design device. Sealing glass. Silicon epitaxial planar chip structure. Lead free parts meet ROHS requirements.

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Main product features: forward voltage reduction, excellent high temperature stability, fast switching ability, lead-free in line with EU ROHS.

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Main product features: low conduction and switching loss, positive temperature coefficient on VF, temperature independent switching behavior, fast reverse recovery, high surge current capability, lead-free electroplating.

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Main product features: p-on-n unidirectional Zener (6mil / 9MIL) (BVR = 7V ~ 10V, BVR = 11V ~ 15V, BVR = 23v ~ 40V, BVR = 45V ~ 65V) n open P unidirectional Zener (6mil / 9MIL) (BVR = 7V ~ 10V) NPN bidirectional Zener (6mil / 9MIL) BVR (positive direction) = 5V ~ 7V.

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Application


Products are widely used:Phone、Adaptor、PC Power、DVDPlayer Power Supply 、LED Lighting、LED TV。

Patent Location Patent NO
蕭特基二極體結構及其製造方法 R.O.C I226709
具有高崩潰電壓及低逆向漏電流的蕭特基二極體 R.O.C I234289
蕭特基二極體及其製造方法 R.O.C I237901
蕭特基阻障二極體及其製造方法 R.O.C I263344
功率蕭特基整流裝置及其製造方法 CN 362744
具有高崩潰電壓及低逆向漏電流的蕭特基二極體 CN 312861
蕭特基二極體結構及其製造方法 CN 449005
Two mask Schottky diode with locos structure USA 6,936,905
High switching speed two mask Schottky diode with high field breakdown USA 6,998,694
Schottky diode with high field breakdown and low reverse leakage current USA 6,825,073
Schottky barrier diode and method of making the same-Trench USA 7,064,408
Schottky barrier diode and method of making the same USA 7,078,780
Silicon carbide Schottky diode and method of making the same USA 7.368.371
High switching speed two mask Schottky diode with high field breakdown USA 7.491.633
Method of forming low forward voltage Schottky barrier diode with LOCOS structure therein USA 11/453,799

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